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| savantic semiconductor product specification silicon npn power transistors 2SC1368 d escription with to-126 package low collector saturation voltage applications for low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 25 v v ceo collector- emitter voltage open base 25 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a p c collector power dissipation t c =25 8 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC1368 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma; i b =0 25 v v (br)cbo collector-base breakdown voltage i c =50a; i e =0 25 v v (br)ebo emitter-base breakdown voltage i e =50a; i b =0 5 v v cesat collector-emitter saturation voltage i c =1.5a; i b =0.15a 0.8 v i cbo collector cut-off current v cb =25v; i e =0 1.0 a i ebo emitter cut-off current v eb =5v; i c =0 1.0 a h fe dc current gain i c =0.5a ; v ce =2v 60 320 f t transition frequency i c =0.5a ; v ce =5v 180 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SC1368 package outline fig.2 outline dimensions |
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